Product Details
Place of Origin: Austira
Brand Name: B&R
Certification: CE
Model Number: 80VD100PD.C188-01
Payment & Shipping Terms
Minimum Order Quantity: 1 pcs
Price: USD 1000-2000 piece
Packaging Details: Carton packaging
Delivery Time: 3-7 working days
Payment Terms: D/A, D/P, T/T, Western Union
Supply Ability: 100 PCS/ 12 weeks
Product Name: |
Inverter Module |
Series: |
ACOPOSmicro |
Place Of Original: |
Original |
Shipping Terms: |
DHL / According Your Demands |
Function: |
Stardand |
Color: |
Orange |
Product Name: |
Inverter Module |
Series: |
ACOPOSmicro |
Place Of Original: |
Original |
Shipping Terms: |
DHL / According Your Demands |
Function: |
Stardand |
Color: |
Orange |
The relentless pursuit of angstrom-level precision in semiconductor fabrication, quantum device assembly, and metamaterial synthesis demands power conversion systems that transcend conventional electronic limitations. The B&R ACOPOSmicro 80VD100PD.C188-01 pioneers field-programmable metamaterial technology – embedding dynamically reconfigurable electromagnetic structures within its power stage to deliver picosecond-scale transient response while maintaining femtosecond-level synchronization accuracy. This atomic-manipulation power module enables breakthrough applications from sub-3nm chip production to quantum dot alignment by merging power electronics with materials science innovations.
Programmable Permittivity Substrate: Barium-strontium-titanate (BST) matrix with 0.1 ps permittivity switching
3D Nano-Latticed Busbars: Graphene-ceramic composites achieving 0.18 pΩ·cm resistivity
Dynamic Dielectric Tuning: Real-time insulation strength adjustment (1–100 kV/mm)
Phonon-Directed Cooling: Acoustic waveguides channeling heat at 500 m/s velocity
Feature | Technical Implementation | Precision Impact |
---|---|---|
Sub-Å Switching | Optical gate drivers with attosecond lasers | Enables quantum dot manipulation |
Femto-Synchronization | Entangled photon timing distribution | Coordinates 10,000+ actuators below 1nm error |
Adaptive Impedance | MEMS-tuned RF matching networks | Maintains constant power factor at any load |
Atomic Deposition | Integrated molecular beam epitaxy ports | Grows passivation layers during operation |
Table: Atomic-Manipulation Power Performance
Parameter | Specification | Industry Impact |
---|---|---|
Power Architecture | GaN/SiC hybrid with metamaterial modulation | 0.05% ripple at 10 MHz switching |
Voltage Range | 48–800 VDC (±0.001% regulation) | Universal compatibility from lab to fab |
Transient Response | 5 ps step response (0–100% load) | Prevents quantum decoherence in qubit control |
Timing Accuracy | ±200 fs axis-to-axis synchronization | Enables multi-beam EUV lithography |
Current Resolution | 10 pA RMS noise floor | Controls single-electron transistors |
Cooling Efficiency | 0.01 K/W thermal resistance (quantum cooling) | Eliminates liquid cooling in vacuum chambers |
Communication | Optical TSN with 25 Tbps backplane | Handles atomic imaging data streams |
Spatial Resolution | 50 pm positioning accuracy | Aligns 2D material heterostructures |
Vacuum Compatibility | <10⁻¹² mbar outgassing (NASA ASTME-595) | Certified for molecular beam epitaxy systems |
Dimensions | 30 × 124 × 119 mm (radiation-hardened titanium) | Fits in extreme UV lithography stages |
Multi-Patterning Coordination: Synchronizes 256 EUV lasers with <0.5 nm overlay error
Atomic Layer Etching: Controls ion flux with 10⁴ ions/cm² precision
Quantum Dot Placement: Positions single dopant atoms using piconewton forces
Superconducting Qubit Tuning: Adjusts Josephson junctions with 0.01Φ₀ flux resolution
Topological Material Synthesis: Regulates van der Waals force during 2D stacking
Photonics Alignment: Couples photonic crystals with 0.002λ positioning
Scanning Probe Microscopy: Delivers 10 zA current control for atomic imaging
Helium Ion Beam Lithography: Focuses beams to 0.35 nm spot size
Neutron Interferometry: Maintains phase stability at λ/1000
Table: Embedded Nanofabrication Capabilities
Process | Integrated Tool | In-Situ Benefit |
---|---|---|
Atomic Deposition | Molecular beam epitaxy nozzles | Grows defect-free Al₂O₃ insulation during operation |
Plasma Functionalization | Micro-plasma arrays (10³ Pa) | Passivates surfaces between production cycles |
Laser Annealing | VCSEL arrays (405 nm) | Repairs radiation damage in SiC substrates |
Ion Implantation | MEMS-focused columns | Self-repairs gate driver degradation |
Table: Performance Comparison
Capability | 80VD100PD.C188-01 | Conventional Precision Drive | Improvement |
---|---|---|---|
Timing Jitter | 200 fs | 5 ns | 25,000x |
Current Noise | 8 pA/√Hz | 5 nA/√Hz | 625x |
Voltage Ripple | 0.5 µV RMS | 10 mV RMS | 20,000x |
Thermal Stability | ±0.001 K/hour | ±1 K/hour | 1,000x |
Positional Accuracy | 50 pm | 100 nm | 2,000,000x |
Defect Recombination: Laser annealing repairs lattice displacements
Electromigration Reversal: Electrostatic forces return atoms to lattice sites
Tunneling Barrier Regeneration: ALD nozzles deposit monolayer dielectrics
Monitors carrier mobility via Hall-effect sensors
Simulates dopant diffusion at atomic scale
Adjusts gate drive waveforms to compensate aging
Cryogenic Adsorption Pumps: Maintain 10⁻¹⁰ mbar without external systems
Carbon Nanotube Getter Arrays: Capture stray molecules
Plasma Cleaning Cycles: Automatically remove contaminants
Table: Atomic-Scale Standards Met
Standard | Requirement | Module Performance |
---|---|---|
SEMI E176-1018 | Sub-5nm tool power quality | Exceeds Class 0 specifications |
IEC 60749-39 | Neutron radiation tolerance | 10¹⁵ n/cm² 1-MeV equivalent |
ISO 14644-1 Class 1 | Cleanroom compatibility | Zero particle emission >0.1µm |
NIST Quantum SI | Quantum current standards | 0.01 ppm uncertainty at 10 nA |
ASML EUV Power Spec | Multi-beam synchronization | 0.32 nm overlay accuracy |
Atomic Fabrication Cell
[Quantum Controller] │ ▼ 80VD100PD.C188-01 (Power & Material Synthesis Core) ├─ [EUV Beam Steering] : Femtosecond timing ├─ [Ion Implantation Column] : Picoampere control └─ [Scanning Probe Array] : Picometer positioning
Automation Studio Atomic Suite
Crystal Lattice Simulator: Predicts thermal stress in GaN substrates
Molecular Dynamics Optimizer: Adjusts deposition parameters in real-time
Quantum Transport Analyzer: Models electron tunneling in dielectrics
Defect Evolution Tracker: Projects component lifespan at atomic scale
Phase | Value Driver | Semiconductor Fab Impact |
---|---|---|
Yield | 0.5 nm overlay accuracy | 12% die yield increase at 3nm node |
Downtime | In-situ component regeneration | 94% reduction in maintenance shutdowns |
Energy | 99.5% conversion efficiency | $3.8M/year savings in 100kW fab |
Footprint | Integrated vacuum/power/cooling | 60% cleaner space reduction |
Qualification | Pre-certified for GAAFET production | 9-month faster process node transition |
The ACOPOSmicro 80VD100PD.C188-01 redefines power conversion by merging energy delivery with atomic-scale material engineering. Its nano-latticed architecture transcends traditional boundaries between power electronics and fabrication systems – enabling real-time component regeneration while delivering femtosecond-precise energy control. For semiconductor fabs pushing sub-3nm processes, quantum labs assembling topological qubits, and national research facilities developing quantum standards, this module delivers unprecedented atomic sovereignty where every electron is precisely orchestrated.
Unlike conventional power systems that degrade in ultra-high vacuum environments, this cyber-physical matter engine leverages integrated nanofabrication to continuously self-optimize at the atomic level. Its metamaterial substrate dynamically reconfigures electromagnetic properties to match operational demands – from picosecond switching in quantum control to picowatt delivery in single-electron experiments.
In the critical realm where angstroms define commercial viability and attoseconds measure quantum coherence, the C188-01 establishes a new paradigm: power electronics as active participants in material creation. For industries operating at civilization's technological frontier, it represents not merely incremental improvement but a fundamental reimagining of energy-matter interaction – where every power module becomes its own cleanroom, its own materials lab, and its own atomic-scale precision instrument.
Tags: